laser diode NDL7660P 1 310 nm optical catv/analog applications ingaasp mqw-dfb laser diode module 1993 document no. p11635ej3v0ds00 (3rd edition) (previous no. lc-2308) date published june 1996 p printed in japan data sheet description NDL7660P is a 1 310 nm dfb (distributed feed-back) laser diode, that has a newly developed multiple quantum well (mqw) structure, butterfly package module with optical isolator. it is especially designed for a 6 mw light source of catv analog applications. features ? low noise rin = e 155 db/hz ? low distortion cso = e 60 dbc ctb = e 65 dbc ? high output power p f = 6.0 mw min. ? long wavelength o p = 1 310 nm ? high isolation 40 db ? internal ingaas monitor pd ? internal thermoelectric cooler ? hermetically sealed 14 pin butterfly package ? singlemode fiber pigtail ? wide operating temperature range ? high reliability ordering information part number available connector NDL7660P without connector NDL7660Pc with fc-upc connector NDL7660Pd with sc-upc connector optical fiber sm-9/125, length = 2 m 20.83 ?.13 26.04 ?.13 14 8 1 7 15.24 2.54 10 min. 8.89 ?.13 0.51 15.0 0.9 4 - 2.67 29.97 ?.13 5.6 11.0 ?.2 2.03 7.0 pin no. function pin no. function 1 2 3 4 5 6 7 cooler anode thermistor pd anode pd cathode case ground nc nc 8 9 10 11 12 13 14 nc nc case ground ld cathode nc ld anode, case ground cooler cathode pd ld #1 #7 #8 #14 cooler thermistor + 6.0 12.7 ?.13 pin connections package dimensions in millimeters top view f
2 NDL7660P absolute maximum ratings (t c = 25 q q q q c) parameter symbol ratings unit operating case temperature t c e 20 to +65 q c storage temperature t stg e 40 to +70 q c lead soldering temperature (10 s) t sld 260 q c optical output power p f 15 mw forward current of ld i f 150 ma reverse voltage of ld v r 2.0 v forward current of pd i f 10 ma reverse voltage of pd v r 20 v cooler current i c 1.0 a cooler voltage v c 2.0 v electro-optical characteristics (t ld = 25 q q q q c, t c = e e e e 20 q q q q c to +65 q q q q c) parameter symbol conditions min. typ. max. unit threshold current i th 20 35 ma forward voltage v f i f = 30 ma 0.9 1.2 1.4 v optical output power from fiber (recommended operating point) p op *1 6.0 mw spontaneous emission power from fiber p s i b = i th 50 p w differential efficiency from fiber k d p f d p op 0.16 0.22 w/a peak emission wavelength o p p f = p op 1 290 1 310 1 330 nm sub-mode suppression ratio smsr p f = p op 30 35 db 1 db bandwidth f p f = p op 900 mhz relative intensity noise rin *2 p f = p op e 155 e 150 db/hz composite second order distortion cso *3 p f = p op e 60 e 55 dbc composite triple beat distortion ctb *3 p f = p op e 65 e 60 dbc carrier to noise ratio cnr *3 p f = p op 50 dbc isolation i s 35 40 db *1. recommended p op value is supplied to each device. *2. conditions : p f = p op , cw measuring bandwidth: 50 mhz to 600 mhz optical reflection e 40 db *3. conditions : p f = p op , optical modulation index = 3.5 %/channel 79 channel unmodulated carriers (55.25 mhz to 547.25 mhz) optical reflection e 40 db, optical loss = 5.5 db
3 NDL7660P electro-optical characteristics (applicable to monitor pd: t ld = 25 c, t c = - - - - 20 c to +65 c) parameter symbol conditions min. typ. max. unit monitor current i m v r = 5 v, p f = p op 50 200 m a dark current i d v r = 5 v 2 10 na tracking error g *4 i m = const. 0.5 db *4. tracking error : g g = 10 log electro-optical characteristics (applicable to thermistor and te cooler: t ld = 25 c, t c = - - - - 20 c to +65 c) parameter symbol conditions min. typ. max. unit thermistor resistance r *5 t ld = 25 c 9.5 10 10.5 k w cooler current i c d t = 40 k 0.6 0.8 a cooler voltage v c d t = 40 k 1.1 1.5 v cooling capacity d t *6 i c = 0.8 a, p f = p op 40 k *5. b constant = 3 400 100 k *6. d t = |t c - t ld | typical characteristics (tc = 25 c) forward current vs. forward voltage 2 1 0 10 20 30 40 50 forward voltage v f (v) forward current i f (ma) output power from fiber vs. ld forward current 40 10 0 1 forward current i f (ma) output power from fiber p f (mw) 2 3 4 5 6 7 8 20 30 50 60 p f p op p op p f (mw) p f 0 i m (@ p f(25 ?) = p op ) i m t ld = 25 ?, t c = ?20 to + 65 ? t ld = t c = 25 ?
4 NDL7660P output power from fiber vs. ld monitor current 0.5 0 1 monitor current i m (ma) optical output power from fiber p f (mw) 9 2 3 4 5 6 7 8 typical thermistor resistance vs. case temperature 50 25 0 2 5 10 30 50 case temperature t c (?c) thermister resistance r (k w) 20 1 3 75 wavelength l (nm) longitudinal mode relative intensity (db) 1 320 1 310 1 300 ?0 10 ?0 frequency response relative response (db) 1.0 0 0.2 0.4 0.6 0.8 p f = p op 0 5 ? rin vs. frequency 400 0 ?40 frequency f (mhz) ?70 relative intensity noise rin (db/hz) ?60 ?50 ?30 ?20 200 300 500 600 700 100 p f = p op optical reflection = ?0 db f - frequency f (ghz)
5 NDL7660P dfb laser diode family for catv/analog applications features p op : operating point power (min. value) packages 3 mw min. 4 mw min. 6 mw min. 8 mw min. 12 mw min. 15 mw min. 14 pin bfy module with smf ndl7680p ndl7650p NDL7660P ndl7670p ndl7672p ndl7673p bfy module with monitor pd, tec, thermistor, isolator reference document name document no. nec semiconductor device reliability/quality control system lei- 1201 quality grade on nec semiconductor devices iei-1209 semiconductor device mounting technology manual c10535e guide to quality assurance for semiconductor devices mei-1202 semiconductor selection guide x10679e remarks
NDL7660P caution within this module there exists gaas (gallium arsenide) material which is a harmful substance if ingested. please do not under any circumstances break the hermetic seal. danger invisible laser radiation avoid direct exposure to beam output power mw max wavelength nm class lllb laser product semiconductor laser avoid exposure-invisible laser radiation is emitted from this aperture nec corporation nec building, 7-1, shiba 5-chome, minato-ku, tokyo 108-01, japan type number: manufactured: serial number: this product conforms to fda regulations as applicable to standards 21 cfr chapter 1. subchapter j. the export of this product from japan is prohibited without governmental license. to export or re-export this product from a country other than japan may also be prohibited without a license from that country. please call an nec sales representative. no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94. 11
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